User manual FERGUSON TE-A20 SERVICE MANUAL

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Manual abstract: user guide FERGUSON TE-A20SERVICE MANUAL

Detailed instructions for use are in the User's Guide.

[. . . ] This device is designed to allow either single (or multiple) Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector. This Data Sheet may be revised by subsequent versions 1 or modifications due to changes in technical specifications. ©2003 Eon Silicon Solution, Inc. , www. essi. com. tw Rev. PIN DESCRIPTION Pin Name A0-A18 DQ0-DQ7 Function Addresses A0 - A18 18 8 DQ0 - DQ7 TE-A20 FIGURE 1. LOGIC DIAGRAM Vcc Data Inputs/Outputs Chip Enable Output Enable Write Enable Supply Voltage (5V ± 10% ) Ground Vss CE OE WE CE OE WE Vcc Vss TABLE 2. [. . . ] After the erase operation has been suspended, the system can read array data from or program data to any sector not selected for erasure. (The device "erase suspends" all sectors selected for erasure. ) Normal read and write timings and command definitions apply. Reading at any address within erasesuspended sectors produces status data on DQ7­DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. See "Write Operation Status" for information on these status bits. After an erase-suspended program operation is complete, the system can once again read array data within non-suspended sectors. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard program operation. See "Write Operation Status" for more information. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 9 ©2003 Eon Silicon Solution, Inc. , www. essi. com. tw Rev. B, Issue Date: 2004/04/01 TE-A20 The system must write the Erase Resume command (address bits are "don't care") to exit the erase suspend mode and continue the sector erase operation. Another Erase Suspend command can be written after the device has resumed erasing. Sector Protection/Unprotection The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors. For Sector Erase, the Toggle Bit is valid after the last rising edge of the Sector Erase W E pulse. The Toggle Bit is also active during the sector erase time-out window. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 11 ©2003 Eon Silicon Solution, Inc. , www. essi. com. tw Rev. B, Issue Date: 2004/04/01 TE-A20 In Byte Programming, if the sector being written to is protected, DQ6 will toggles for about 2 µs, then stop toggling without the data in the sector having changed. In Sector Erase or Chip Erase, if all selected sectors are protected, DQ6 will toggle for about 100 µs. The chip will then return to the read mode without changing data in all protected sectors. The Toggle Bit timing diagram is shown in Figure 9. DQ5 Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a "1. " (The Toggle Bit (DQ6) should also be checked at this time to make sure that the DQ5 is not a "1" due to the device having returned to read mode. ) This is a failure condition that indicates the program or erase cycle was not successfully completed. DATA Polling (DQ7), Toggle Bit (DQ6) and Erase Toggle Bit (DQ2) still function under this condition. Setting the CE to VIH will partially power down the device under those conditions. The DQ5 failure condition may appear if the system tries to program a "1" to a location that is previously programmed to "0. " Only an erase operation can change a "0" back to a "1. " Under this condition, the device halts the operation, and when the operation has exceeded the timing limits, DQ5 produces a "1. " Under both these conditions, the system must issue the reset command to return the device to reading array data. DQ2 Erase Toggle Bit II The "Toggle Bit" on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. [. . . ] 0°C to +70°C Industrial (I) Devices Ambient Temperature (T A ). -40°C to +85°C VCC Supply Voltages VCC for ± 5% devices . +4. 50 V to +5. 50 V Operating ranges define those limits between which the functionality of the device is guaranteed. Maximum Negative Overshoot Waveform This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Maximum Positive Overshoot Waveform 20 ©2003 Eon Silicon Solution, Inc. , www. essi. com. tw Rev. DC Characteristics (Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 5. 0V ± 10%) Symbol ILI ILO ICC1 ICC2 ICC3 ICC4 VIL VIH VOL VOH Parameter Input Leakage Current Output Leakage Current Supply Current (read) TTL Byte Supply Current (Standby) TTL Supply Current (Standby) CMOS Supply Current (Program or Erase) Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage TTL Output High Voltage CMOS VID ILIT VLKO A9 Voltage (Electronic Signature) A9 Current (Electronic Signature) Supply voltage (Erase and Program lock-out) A9 = VID 3. 2 IOL = 2 mA IOH = -2. 5 mA IOH = -100 µA 2. 4 Vcc 0. 4V 10. 5 Test Conditions 0V VIN Vcc 0V VOUT Vcc Min Max ±5 ±5 30 1. 0 5. 0 30 -0. 5 2 0. 8 Vcc + 0. 5 0. 45 Unit µA µA mA MA µA mA V V V V V 11. 5 100 4. 2 V µA V CE = VIL; OE = VIH; f = 6MHz CE = VIH CE = Vcc ± 0. 3V Byte program, Sector or Chip Erase in progress This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 21 ©2003 Eon Silicon Solution, Inc. , www. essi. com. tw Rev. 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